Integral temperature sensors on BT 2 Most semiconductor temperature sensors use the ratio between base-emitter voltage and collector current. Basic temperature measurement circuit Temperature sensor cell diagrams Brokaw cell Current temperature sensor cell
Integrated temperature sensors for BT 3 Temperature sensors with current output TO-92Case from -25 to 105T A,°C 0.298I CC,mA from 4 to 30V CC,V Various schemes inclusion of current diesel engines to determine: a the average temperature value at three points in space, b the point with the minimum temperature of the three controlled ones, c the temperature difference at two points
Integrated temperature sensors for BT 4 Temperature sensors with voltage output Vcc, V2, Sensitivity, mV/С 10 Operating temperature range, С AD AD Vcc, V Sensitivity, mV/С 10 Operating temperature range, С Icc, mA0.12 LM45 LM135 /235/335 Vcc, V2, Sensitivity, mV/K 10 Working temperature range, C LM LM LM inclusions: a - without calibration, b - with calibration
Integrated temperature sensors on BT 5 Schemes of a simple thermostat Ratiometric DT: a - structural diagram, b - circuit for converting temperature into a code that does not depend on the supply voltage Ratiometric DT Measuring systems are called ratiometric if the final result of the conversion does not depend on temperature. The output signal of ratiometric sensors depends on the supply voltage. Vcc, V2.7...3.6 Sensitivity, mV/С 28 Working temperature range, С Icc, mA0.5 PackageSOIC-8, TO92
Digital Output Temperature Sensors 6 The MAX6576/MAX6577 are low-cost, low-current, single-wire output temperature sensors. The MAX6576 converts the ambient temperature to a square wave with a period proportional to the absolute temperature (°K). The MAX6577 chip converts the ambient temperature to a square wave at a frequency proportional to the absolute temperature. The MAX6576 provides accuracy of ±3°C at +25°C, ±4.5°C at +85°C and ±5°C at +125°C. The MAX6577 provides accuracy of ±3°C at +25°C, ±3.5°C at +85°C and ±4.5°C at +125°C. Name Interface Accuracy (±°C) Supply voltage range (V) Operating range (°C) Chassis MAX6576 MAX6577 period - temp. frequency - temp. 3 2.7 to 5.5 –40 to /SOT2 3 Both devices feature a single-wire output that minimizes the number of pins required to interface with the microprocessor. The period/frequency range of the output square wave can be selected by connecting the two timing pins (TS0, TS1) to VDD (power) or GND (common). The MAX6576/MAX6577 are available in compact 6-pin SOT23 packages.
PWM Temperature Sensors 7 TMP03/TMP04 is a semiconductor IC whose output square wave duration is directly proportional to its temperature. The built-in temperature converter generates a voltage directly proportional to the temperature, which is compared with the reference voltage, and the result of the comparison is fed to a digital modulator. Scale output serial encoding format digital signal allows you to avoid errors that occur in other devices due to the instability of the clock frequency. The instruments have a typical measuring error of ±1.5°C from -25°C to +100°C and excellent linearity of the conversion characteristic. The digital output of the TMP04 is TTL/CMOS compatible, allowing it to be connected directly to most microcontrollers. The open collector output of the TMP03 has a maximum sink current of 5 mA. The TMP03 and TMP04 have an operating supply voltage range of 4.5 to 7 V. Operating from a 5 V power supply with an unloaded output, the devices consume less than 1.3 mA. The TMP03/TMP04 are specified for -40°C to +100°C operation and are available in TO-92, SO-8 and TSSOP-8 packages. With reduced accuracy, the instruments are capable of measuring temperatures up to 150°C. DT output signal format
Temperature Sensors with Serial Digital Interface 8 In addition to a temperature sensor based on a bipolar transistor, this microcircuit also includes a sigma-delta ADC, the interface of which is compatible with SPI and MICROWIRE interfaces. The 13-digit ADC provides a resolution of °С in the temperature range from -55 to +150°С. The sensor can be switched to a shutdown mode with reduced power consumption (shutdown mode), in which the current consumption is reduced to 10 μA. The sensor is manufactured in the SO-8 package and in a miniature 5-pin micro SMD package. Temperature sensors AD7816/17/18 Temperature sensors DS18B20
Temperature comparators 9 The device has an open collector output that switches when the temperature reaches a user-defined value. The ADT05 has a hysteresis of approximately 4°C, which ensures a fast on/off cycle. The ADT05 is designed to operate with a single supply voltage of +2.7 to +7.0 V, making it easy to use in both battery applications and industrial control systems. The value of the resistor that sets the response temperature is determined by the expression: R SET = 39 MΩ ° C / (T SET (° C) + 281.6 ° C) - 90.3 kΩ. The TMP01 is a two-channel controller that also provides an output voltage proportional to the absolute temperature (output 5). In addition, it generates control signals on one or both outputs when the temperature is outside the set temperature range. The upper and lower limits of the range and the hysteresis of the comparators of each of these channels are set by external resistances.
The rapid development and expansion of the areas of application of electronic devices is due to the improvement of the element base, which is based on semiconductor devices. Semiconductor materials in terms of their resistivity (ρ = 10-6 ÷ 1010 Ohm) occupy an intermediate place between conductors and dielectrics. Semiconductor materials
Semiconductor Diodes This is a semiconductor device with one pn junction and two terminals, the operation of which is based on the properties of the pn junction. Main property p-n- the transition is one-way conduction - the current flows only in one direction. Conditionally - graphic designation (UGO) of the diode has the shape of an arrow, which indicates the direction of current flow through the device. Structurally, the diode consists of a p-n-junction enclosed in a case (with the exception of micromodular unpackaged ones) and two leads: from the p-region - the anode, from the n-region - the cathode. That is, a diode is a semiconductor device that passes current in only one direction - from the anode to the cathode. The dependence of the current through the device on the applied voltage is called the volt - ampere characteristic (CVC) of the device I \u003d f (U).
Transistors A transistor is a semiconductor device designed to amplify, generate and convert electrical signals, as well as switching electrical circuits. A distinctive feature of the transistor is the ability to amplify voltage and current - the voltages and currents acting at the input of the transistor lead to the appearance of much larger voltages and currents at its output. The transistor got its name from the reduction of two English words tran(sfer) (re)sistor - controlled resistor. The transistor allows you to adjust the current in the circuit from zero to the maximum value.
Classification of transistors: - according to the principle of operation: field (unipolar), bipolar, combined. - according to the value of dissipated power: small, medium and large. - according to the value of the limiting frequency: low -, medium -, high - and superhigh-frequency. - according to the value of the operating voltage: low - and high voltage. - by functional purpose: universal, amplifying, key, etc. - by design: unpackaged and in case design, with rigid and flexible leads.
Depending on the functions performed, transistors can operate in three modes: 1) Active mode - used to amplify electrical signals in analog devices. The resistance of the transistor changes from zero to the maximum value - they say the transistor "opens slightly" or "under closes". 2) Saturation mode - the resistance of the transistor tends to zero. In this case, the transistor is equivalent to a closed relay contact. 3) Cutoff mode - the transistor is closed and has a high resistance, i.e. it is equivalent to an open relay contact. Saturation and cutoff modes are used in digital, pulse and switching circuits.
Indicator Electronic indicator is an electronic indicating device designed for visual monitoring of events, processes and signals. Electronic indicators are installed in various household and industrial equipment to inform a person about the level or value of various parameters, such as voltage, current, temperature, battery charge, etc. Often, a mechanical indicator with an electronic scale is mistakenly called an electronic indicator. electronic indicating device mechanical indicator
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Presentation on the topic: semiconductor devices
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The rapid development and expansion of the areas of application of electronic devices is due to the improvement of the element base, which is based on semiconductor devices. Semiconductor materials in terms of their specific resistance (ρ = 10-6 ÷ 1010 Ohm m) occupy an intermediate place between conductors and dielectrics. The rapid development and expansion of the areas of application of electronic devices is due to the improvement of the element base, which is based on semiconductor devices. Semiconductor materials in terms of their specific resistance (ρ = 10-6 ÷ 1010 Ohm m) occupy an intermediate place between conductors and dielectrics.
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For the manufacture of electronic devices, solid semiconductors with a crystalline structure are used. For the manufacture of electronic devices, solid semiconductors with a crystalline structure are used. Semiconductor devices are devices whose operation is based on the use of the properties of semiconductor materials.
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Semiconductor Diodes This is a semiconductor device with one p-n junction and two terminals, the operation of which is based on the properties of the p-n junction. The main property of the p-n junction is one-way conduction - the current flows in only one direction. The conditional graphic designation (UGO) of a diode has the shape of an arrow, which indicates the direction of current flow through the device. Structurally, the diode consists of a p-n-junction enclosed in a case (with the exception of micromodular unpackaged ones) and two leads: from the p-region - the anode, from the n-region - the cathode. Those. A diode is a semiconductor device that allows current to flow in only one direction, from the anode to the cathode. The dependence of the current through the device on the applied voltage is called the current-voltage characteristic (CVC) of the device I \u003d f (U).
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Transistors A transistor is a semiconductor device designed to amplify, generate and convert electrical signals, as well as switching electrical circuits. A distinctive feature of the transistor is the ability to amplify voltage and current - the voltages and currents acting at the input of the transistor lead to the appearance of much larger voltages and currents at its output. The transistor got its name from the abbreviation of two English words tran (sfer) (re) sistor - controlled resistor. The transistor allows you to adjust the current in the circuit from zero to the maximum value.
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Classification of transistors: Classification of transistors: - according to the principle of operation: field (unipolar), bipolar, combined. - according to the value of dissipated power: small, medium and large. - according to the value of the limiting frequency: low-, medium-, high- and superhigh-frequency. - according to the value of the operating voltage: low- and high-voltage. - by functional purpose: universal, amplifying, key, etc. - by design: unpackaged and in case version, with rigid and flexible leads.
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Depending on the functions performed, transistors can operate in three modes: Depending on the functions performed, transistors can operate in three modes: 1) Active mode - used to amplify electrical signals in analog devices. The resistance of the transistor changes from zero to the maximum value - they say the transistor "opens" or "closes". 2) Saturation mode - the resistance of the transistor tends to zero. In this case, the transistor is equivalent to a closed relay contact. 3) Cutoff mode - the transistor is closed and has a high resistance, i.e. it is equivalent to an open relay contact. Saturation and cutoff modes are used in digital, pulse and switching circuits.
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Indicator An electronic indicator is an electronic indicating device designed for visual monitoring of events, processes and signals. Electronic indicators are installed in various household and industrial equipment to inform a person about the level or value of various parameters, such as voltage, current, temperature, battery charge, etc. Often, an electronic indicator is mistakenly called a mechanical indicator with an electronic scale.
Introduction When using semiconductor devices in electronic devices, to unify their designation and standardize parameters, systems are used symbols. This system classifies semiconductor devices according to their purpose, basic physical and electrical parameters, structural and technological properties, type of semiconductor materials. The system of symbols for domestic semiconductor devices is based on state and industry standards. The first GOST for the GOST semiconductor device designation system was introduced in 1964. Then, as new classification groups of devices appeared, it was changed to GOST, and then to the industry standard OST and OST, respectively, in 1972, 1977, 1981. With this modification, the main elements of the alphanumeric code of the conventional notation system were preserved. This notation is logically structured and allows you to build up as you go. further development element base. Basic terms, definitions and letter designations the main and reference parameters of semiconductor devices are given in the following state standards: - Semiconductor diodes. Terms, definitions and letter designations of parameters; - Field effect transistors. Terms, definitions and letter designations of parameters; - Bipolar transistors. Terms, definitions and letter designations of parameters; - Thyristors. Terms, definitions and letter designations of parameters.
Symbols and classification of domestic semiconductor devices The system of designations of modern semiconductor diodes, thyristors and optoelectronic devices is established by the industry standard OST and is based on a number of classification features of these devices. The notation is based on an alphanumeric code, which consists of 5 elements ...
First element The first element (letter or number) denotes the original semiconductor material, on the basis of which the semiconductor device is created. For devices of general civil use, letters are used that are the initial letters in the name of the semiconductor or semiconductor compound. For special applications, numbers are used instead of these letters. Raw material Legend Germanium or its compounds G or 1 Silicon or its compounds K or 2 Gallium compounds (for example, gallium arsenide) A or 3 Indium compounds (for example, indium phosphide) I or 4
The second element is a subclass of semiconductor devices. Usually the letter is chosen from the name of the device, as the first letter of the name. A Triode thyristors Y OE emitting devices L Tunnel diodes I Optocouplers O
Third element. The third element (number) in the designation of semiconductor devices determines the main functionality device. For different subclasses of devices, the most characteristic operational parameters (functionality) are different. For transistors, this is the operating frequency and power dissipation, for rectifier diodes, the maximum forward current value, for zener diodes, the stabilization voltage and power dissipation, for thyristors, the value of the current in the open state.
Fifth Element. The fifth element (letter) in the alphanumeric code of the system of symbols indicates the sorting of devices manufactured in a single technology according to individual parameters. For designation, capital letters of the Russian alphabet from A to Z are used, except for Z, O, Ch, Y, Sh, Shch, Z, similar in spelling to numbers.
Symbols and classification of foreign semiconductor devices Abroad, there are various systems of designations for semiconductor devices. The most common is the JEDEC notation adopted by the United States Electronics Technical Council. According to this system, devices are designated by an index (code, marking), in which the first digit corresponds to the number p-n junctions: 1 - diode, 2 - transistor, 3 - tetrode (thyristor). The number is followed by the letter N and the serial number, which is registered by the association of enterprises electronics industry(EIA). The number may be followed by one or more letters indicating the breakdown of devices of the same type into standard ratings according to various parameters or characteristics. However, the numbers serial number do not determine the type of source material, frequency range, power dissipation or application. In Europe, a system is used in which designations for semiconductor devices are assigned by the Association International Pro Electron. According to this system, household appliances for general use are designated by two letters and three numbers. So, for devices of wide application, after two letters there is a three-digit serial number from 100 to 999. For devices used in industrial and special equipment, the third character is a letter (letters are used in reverse alphabetical order: Z, Y, X, etc. ), followed by a serial number from 10 to 99.
First element. The first element (letter) denotes the original semiconductor material on the basis of which the semiconductor device was created. 4 Latin letters A, B, C and D are used, in accordance with the type of semiconductor or semiconductor connection. Starting material Band gap, eV Symbols Germanium 0.6…1 A Silicon 1…1.3 V Gallium arsenide more than 1.3 С Indium antimonide less than 1.6 D
The second element (letter) designates a subclass of semiconductor devices. The third element (number or letter) denotes in the alphanumeric code semiconductor devices intended for general civil use equipment (number) or for special application equipment (letter). As a letter in the latter case, capital Latin letters are used, consumed in the reverse order Z, Y, X, etc. The fourth element (2 digits) means the serial number of the technological development and varies from 01 to 99. For example, VTX is a special-purpose silicon controlled rectifier (thyristor) with registration number 10 and a voltage of 200 V.
JIS-C-7012 standard The standard notation system developed in Japan (JIS-C-7012 standard adopted by the EIAJ-Electronic Industries Association of Japan) allows you to determine the class of a semiconductor device (diode or transistor), its purpose, and the type of semiconductor conductivity. The type of semiconductor material in the Japanese system is not reflected. The JIS-C-7012 semiconductor designation symbol consists of five elements. First element. The first element (number) indicates the type of semiconductor device. 3 digits (0, 1, 2 and 3) are used according to the instrument type. Second element. The second element is denoted by the letter S and indicates that this device is a semiconductor. The letter S is used as the initial letter of Semiconductor. Third element. The third element (letter) designates a subclass of semiconductor devices. The following table lists the letters used to designate subclasses of Fourth Element. The fourth element indicates the registration number of the technological development and begins with the number 11. Fifth element. The fifth element reflects the development modification (A and B are the first and second modifications).
JEDEC The JEDEC (Joint Electron Device Engineering Council) naming convention has been adopted by the United States Joint Technical Council for Electronic Devices. According to this system, devices are designated by an index (code, marking), in which: The first element. The first element (number) stands for number p-n transitions. 4 digits are used (1, 2, 3 and 4) in accordance with the type of device: 1 - diode, 2 - transistor, 3 - thyristor, 4 - optocoupler. Second element. The second element consists of the letter N and a serial number, which is registered by the Electronic Industries Association (EIA). The serial number digits do not identify source material type, frequency range, power dissipation or application. Third element. The third element - one or more letters, indicate the breakdown of devices of the same type into ratings according to various characteristics. A manufacturer whose instruments are similar in performance to those registered by the EIA may present their instruments with the JEDEC designation. Example: 2N2221A, 2N904.
Graphic symbols and standards B technical documentation and special literature, conventional graphic symbols of semiconductor devices are used in accordance with GOST “Conditional, graphic symbols in diagrams. Semiconductor Devices.
Symbols of electrical parameters and comparative reference data of semiconductor devices For semiconductor devices, the values of the main electrical parameters and limiting operational characteristics, which are given in reference books, are defined and standardized. These parameters include: voltage (for example, Upr - constant forward voltage of the diode), current (for example, Ist, max - the maximum allowable current in the stabilization of the zener diode, power (for example, Pout - output power of a bipolar transistor), resistance (for example, rdif - differential resistance of the diode), capacitance (for example, Ck is the capacitance of the collector junction), time and frequency (for example, trev, arr - the reverse recovery time of the thyristor, diode), temperature (for example, Tmax - maximum ambient temperature). There are hundreds of parameters, and for each subclass of semiconductor devices, these parameters will be different.In reference publications, the values \u200b\u200bof the main electrical parameters and the limiting operational characteristics of semiconductor devices.Below, as an example, these data are given for typical representatives various types appliances.
Examples of the designation of some transistors: KT604A - silicon bipolar, medium power, low frequency, development number 04, group A 2T920 - silicon bipolar, high power, high frequency, development number 37, group A development 02, group A, unpackaged, with flexible leads on a crystal holder. 2D921A - silicon pulsed diode with an effective minority carrier lifetime less than 1 ns, development number 21, group A 3I203G - gallium arsenidogallium tunnel generator diode, development number 3, group G AD103B - infrared band arsenidogallium emitting diode, development number 3, group B.
Main GOSTs: GOST Semiconductor devices. Terms and definitions OST, Semiconductor devices. The system of symbols. GOST 2, Conditional graphic symbols in diagrams. Semiconductor devices GOST Semiconductor devices. Basic dimensions GOST Bipolar transistors. Terms, definitions and letter designations of parameters. GOST Field effect transistors. Terms, definitions and letter designations of parameters. GOST Semiconductor infrared radiating devices. Main dimensions. GOST Semiconductor diodes. Terms, definitions and letter designations of parameters.
